Typical Electrical Characteristics
-25
2.5
-20
V GS = -4.5V
-2.7
-3.0
2
V GS = -2.0V
-2.5
-15
-2.0
-2.5
-10
1.5
-2.7
-3.0
-3.5
-5
-1.5
1
-4.5
0
0
-0.5
-1
-1.5
-2
-2.5
-3
0.5
0
-5
-10
-15
-20
-25
1.6
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.4
I D = -6.5A
V GS = -4.5V
V GS = -4.5V
T J = 125°C
1.5
1.2
1
25°C
1
-55°C
0.8
0.6
-50
-25
0
25
50
75
100
125
150
0.5
0
-5
-10
-15
-20
-25
T , JUNCTION TEMPERATURE (°C)
-25
J
Figure 3. On-Resistance Variation
with Temperature.
1.4
I D , DRAIN CURRENT (A)
Figure 4. On-Resistance Variation
with Drain Current and Temperature.
J
-20
V DS = -5.0V
T  = -55°C
125°C
1.2
V DS = V GS
I D = -250μA
25°C
-15
-10
-5
1
0.8
0.6
0
0
-0.5
-1
-1.5
-2
-2.5
-3
0.4
-50
-25
0
25
50
75
100
125
150
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
T J , JUNCTION TEMPERATURE (°C)
Figure 6. Gate Threshold Variation
with Temperature.
NDS8434 Rev. A3
相关PDF资料
NDS8947 MOSFET 2P-CH 30V 4A 8-SOIC
NDS9400A MOSFET P-CH 30V 3.4A 8-SOIC
NDS9407 MOSFET P-CH 60V 3A 8-SOIC
NDS9945 MOSFET 2N-CH 60V 3.5A 8-SOIC
NDS9948 MOSFET 2P-CH 60V 2.3A 8-SOIC
NDS9952A MOSFET N+P 30V 2.9A 8-SOIC
NDT014L MOSFET N-CH 60V 2.8A SOT-223
NDT014 MOSFET N-CH 60V 2.7A SOT-223-4
相关代理商/技术参数
NDS8434_Q 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8434A 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8434A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDS8434A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8
NDS8434A_NL 功能描述:MOSFET 20V P-CH. FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8435 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8435A 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8435A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8